首页 > 器件类别 > 分立半导体 > 二极管

DBS102G

桥式整流器 1A 100v

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
PLASTIC, DBS, 4 PIN
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
100 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PDSO-G4
湿度敏感等级
1
最大非重复峰值正向电流
50 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
Base Number Matches
1
文档预览
DB(S)101G - DB(S)107G
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
DB
Features
UL Recognized File # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
High temperature soldering guaranteed:
260
o
C / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Pure tin plated, Lead free. Leads solderable
per MIL-STD-202, Method 208
High surge current capability
DBS
.047(1.20)
.040(1.02)
.205(5.2)
.195(5.0)
.404(10.3)
.386(9.80)
.335(8.51)
.320(8.13)
45
0
.255(6.5)
.245(6.2)
.013(0.33)
.0088(0.22)
.130(3.30)
.120(3.05)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
DB
DB
DB
DB
DB
DB
DB
Symbol
101G 102G 103G 104G 105G 106G 107G
DBS DBS DBS DBS DBS DBS DBS
101G 102G 103G 104G 105G 106G 107G
Units
V
V
V
A
A
V
uA
uA
o
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
= 40
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Typical Thermal resistance ( Note 1 )
Operating Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJA
R
θJL
T
J
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50
1.1
600
420
600
800
560
800
1000
700
1000
Storage Temperature Range
T
STG
1. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted
Notes:
On P.C.B. with 0.2” x 0.2” (5mm x 5mm) Copper Pads.
2. DBS for Surface Mount Package.
10
500
40
15
-55 to +150
-55 to +150
C/W
o
o
C
C
Version: A06
RATINGS AND CHARACTERISTIC CURVES (DB(S)101G THRU DB(S)107G)
FIG.1- MAXIMUM DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
100
.06" (1.5mm)
PCB
Tj=125
0
C
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
AVERAGE FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
0.5
Copper Pauls
.51" x .51"
(13mm x 13mm)
10
1
60Hz RESISTIVE OR
INDUCTIVE LOAD
0
20
40
60
80
100
o
AMBIENT TEMPERATURE. ( C)
120
140
150
0.1
Tj=25
0
C
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
60
PEAK FORWARD SURGE CURRENT. (A)
50
40
Single Sine - Wave
(JEDEC Method)
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
30
100
20
FIG.4- TYPICAL JUNCTION CAPACITANCE PER
BRIDGE ELEMENT
CAPACITANCE.(pF)
10
0
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
10
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.5- TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMENT
10
1
1
10
REVERSE VOLTAGE. (V)
100
INSTANTANEOUS FORWARD CURRENT. (A)
1
0.1
Tj=25 C
PULSE WIDTH-300 S
2% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
FORWARD VOLTAGE. (V)
Version: A06
查看更多>
参数对比
与DBS102G相近的元器件有:DB101G、DB103G、DB105G、101G。描述及对比如下:
型号 DBS102G DB101G DB103G DB105G 101G
描述 桥式整流器 1A 100v 桥式整流器 1A 50v 桥式整流器 1A 200v 桥式整流器 1A 600v Rectifier Diode,
Reach Compliance Code unknown unknown unknown unknown compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
是否Rohs认证 符合 符合 符合 符合 -
包装说明 PLASTIC, DBS, 4 PIN PLASTIC, DB, 4 PIN PLASTIC, DB, 4 PIN PLASTIC, DB, 4 PIN -
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED -
最小击穿电压 100 V 50 V 200 V 600 V -
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
二极管元件材料 SILICON SILICON SILICON SILICON -
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V 1.1 V -
JESD-30 代码 R-PDSO-G4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 -
湿度敏感等级 1 1 1 1 -
最大非重复峰值正向电流 50 A 50 A 50 A 50 A -
元件数量 4 4 4 4 -
相数 1 1 1 1 -
端子数量 4 4 4 4 -
最高工作温度 150 °C 150 °C 150 °C 150 °C -
最低工作温度 -55 °C -55 °C -55 °C -55 °C -
最大输出电流 1 A 1 A 1 A 1 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE IN-LINE IN-LINE IN-LINE -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified -
最大重复峰值反向电压 100 V 50 V 200 V 600 V -
表面贴装 YES NO NO NO -
端子形式 GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
端子位置 DUAL DUAL DUAL DUAL -
厂商名称 - Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消